Theoretical study on waveguide solar cell containing nanoparticles

M. M. Shabat, D. M. El-Amassi, and D. M. Schaadt

Deutsche Gesellschaft für angewandte Optik e. V, Hannover, DeutschlandGermany德国

Light trapping in waveguide structure containing Nanoparticles

M. M. Shabat, D. M. El-Amassi, and D. M. Schaadt

Global Advanced Materials & Surfaces Forum, Dubai, United Arab Emirates

Plasmonic solar cells based on group III-arsenide heterostructures

D. M. Schaadt

Institut für Solarenergieforschung Hameln (ISFH)Institute for Solar Energy Research Hamelin (ISFH)Institute for Solar Energy Research Hamelin (ISFH), Hameln, DeutschlandHamelin, GermanyHamelin, 德国 (eingeladen)(invited)(邀请报告)

Ferromagnetism in Cu-doped nitrides and overview of other lab and research activities

D. M. Schaadt

Universidade de São Paulo (USP), São Carlos, BrasilienSão Carlos, BrazilSão Carlos, Brazil (eingeladen)(invited)(邀请报告)

Plasmonic solar cells based on group III-arsenide heterostructures

D. M. Schaadt

XII Brazilian MRS Meeting, Campos do Jordão, BrasilienCampos do Jordão, BrazilCampos do Jordão, Brazil (eingeladen)(invited)(邀请报告)

III-V heterostructures for photovoltaic and spintronic devices

D. M. Schaadt

TU Braunschweig, Braunschweig, DeutschlandGermany德国 (eingeladen)(invited)(邀请报告)

III-V semiconductor materials and devices for application in photovoltaics, optoelectronics, spintronics and UV detection

D. M. Schaadt

TU ClausthalClausthal University of TechnologyClausthal University of Technology, Clausthal, DeutschlandGermany德国 (eingeladen)(invited)(邀请报告)

Cu-doped GaN: a ferromagnetic semiconductor

P. R. Ganz, Ch. Sürgers, G. Fischer, und, D. M. Schaadt

HL 20.1, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Electrical Contacting of Pyramidal Microcavities for Single- Photon Applications

D. Rülke, D. M. Schaadt, H. Kalt, und M. Hetterich

HL 43.17, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Hall effect in Cu-doped GaN films grown by molecular beam epitaxy

M. Maschek, P. R. Ganz, Ch. Sürgers, H. v. Löhneysen, und, D. M. Schaadt

HL 91.17, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Microstructure of Epitaxial AlN Layers on Si(111)

D. Litvinov, D. Gerthsen, D. Z. Hu, and D. M. Schaadt

Microscopy Conference 2011, Kiel, DeutschlandGermany徳国

Structural Analysis of InN/AlN/Si(111) Heterostructures

R. Walther, D. Litvinov, R. Schneider, M. Fotouhi, D. Gerthsen, R. Vöhringer, D. Z. Hu, and D. M. Schaadt

Microscopy Conference 2011, Kiel, DeutschlandGermany徳国

TEM 3-beam study of annealing effects in InGaNAs using ab initio structure factors for strain-relaxed supercells

K. Müller, M. Schowalter, A. Rosenauer, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, O. Rubel, R. Fritz, and K. Volz

Microscopy of Semiconducting Materials, Cambridge, Vereinigtes KönigreichUnited Kingdom英国

Microstructure Characterization of Cu-Doped GaN Grown by Plasma Assisted Molecular Beam Epitaxy

T.-H. Huang, P. R. Ganz, L. Chang, and D. M. Schaadt

219^th ECS Meeting, Montréal, KanadaCanada加拿大

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Growth and microstructure of GaN:Cu

P. R. Ganz, G. Fischer, C. Sürgers, L. Chang, and D. M. Schaadt

Euro-MBE 2011, Alpe d'Huez, FrankreichFrance法国

Investigation of the local electronic structure of Cu-doped GaN grown by plasma assisted MBE

R. Schuber, P. R. Ganz, F. Wilhelm, A. Rogalev, and D. M. Schaadt

Euro-MBE 2011, Alpe d'Huez, FrankreichFrance法国

Annealing effects on site-selective InAs quantum dots

M. Helfrich, J. Hendrickson, M. Gehl, D. Rülke, D. Z. Hu, M. Hetterich, S. Linden, M. Wegener, H. Kalt, G. Khitrova, H. M. Gibbs, and D. M. Schaadt

Euro-MBE 2011, Alpe d'Huez, FrankreichFrance法国

Quantum-Dot Pyramidal Microcavities as Candidates for Electrically Pumped Efficient Single-Photon Sources

D. Rülke, Ch. Reinheimer, F. Stockmar, D. M. Schaadt, H. Kalt, and M. Hetterich

Q 16.5, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Growth and microstructure of GaN:Cu - a possible spinaligner for nitride-based spintronic

P. R. Ganz, G. Fischer, Ch. Sürgers, H. T. Hsing, L. Chang, and D. M. Schaadt

HL 17.4, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

In_xGa_1-xN films for use in photo-electrochemical cells

Y.H. Wu, P. R. Ganz, D. Z. Hu, and D. M. Schaadt

HL 44.30, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Preparation and immobilization of noble metal nanoparticles for plasmonic solar cells

R. Wang, M. Pitzer, D. Z. Hu, D. M. Schaadt, and Lj. Fruk

HL 85.59, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Time-dependent measurements of single In(Ga)As quantum dots embedded in GaAs reversed pyramid cavities

Ch. Reinheimer, D. Rülke, D. Schaadt, H. Kalt, and M. Hetterich

HL 85.59, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Investigation of the local electronic structure of Cu-doped GaN by XANES and XLD

R. Schuber, P. R. Ganz, F. Wilhelm, A. Rogalev, and D. M. Schaadt

HL 85.113, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Effects of in-situ annealing on site-selective InAs quantum dots grown on pre-structured GaAs substrates

M. Helfrich, D. Rülke, J. Hendrickson, M. Gehl, D. Z. Hu, M. Hetterich, S. Linden, M. Wegener, G. Khitrova, H. M. Gibbs, H. Kalt, and D. M. Schaadt

HL 86.1, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Annealing in InGaNAs studied by TEM three-beam imaging

K. Müller, M. Schowalter, M. Hetterich, D. Z. Hu, D. Schaadt, P. Gilet, K. Volz, and A. Rosenauer

MM 9.4, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Quantitative transmission measurements in a scanning electron microscope

T. Volkenandt, E. Müller, D. Z. Hu, D. M. Schaadt and D. Gerthsen

International Microscopy Congress (IMC17), Rio de Janeiro, BrasilienBrazil巴西

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Measuring of Segregation Profiles from HAADF-STEM Images

T. Mehrtens, M. Schowalter, K. Müller, D. Z. Hu, D. M. Schaadt, and A. Rosenauer

International Microscopy Congress (IMC17), Rio de Janeiro, BrasilienBrazil巴西

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Dual compositional mapping in InGaNAs using a single TEM lattice fringe image

K. Müller, M. Schowalter, K. Volz, Oleg Rubel, M. Hetterich, D. Z. Hu, D. M. Schaadt, and A. Rosenauer

International Microscopy Congress (IMC17), Rio de Janeiro, BrasilienBrazil巴西

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Cu-doped nitrides: promising candidates for a nitride based spinaligner

P. R. Ganz, G. Fischer, C. Sürgers, and D. M. Schaadt

16^th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, DeutschlandGermany德国

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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

M. Helfrich, D. Z. Hu, J. Hendrickson, M. Gehl, D. Rülke, R. Gröger, D. Litvinov, S. Linden, M. Wegener, D. Gerthsen, T. Schimmel, M. Hetterich1, H. Kalt, G. Khitrova, H. M. Gibbs, and D. M. Schaadt

16^th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, DeutschlandGermany德国

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Growth of non-polar GaN on LiGaO₂ by plasma-assisted MBE

R. Schuber, R.Schuber, Y. L. Chen, C. H. Shih, T. H. Huang, P. Vincze, I. Lo, L. W. Chang, Th. Schimmel, M. M. C. Chou, and D. M. Schaadt

16^th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, DeutschlandGermany德国

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Influence of AlAs monolayer on InAs quantum dots stacks embedded in an InGaAs/GaAs matrix

D. Z. Hu, and D. M. Schaadt

16^th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, DeutschlandGermany德国

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Quantitative analysis by electron transmission measurements in a scanning electron microscope

E. Müller, T. Volkenandt, D. Z. Hu, D. M. Schaadt and D. Gerthsen

Microscopy & Microanalysis 2010, Portland, OR, Vereinigte Staaten von AmerikaUSA美国

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InAs quantum dot site selective growth on GaAs substrates

J. Hendrickson, M. Gehl, M. Helfrich, D. Z. Hu, D. M. Schaadt, S. Linden, M. Wegener, H. M. Gibbs, and G. Khitrova

NOEKS 10, Paderborn, DeutschlandGermany德国

Toward high-efficiency quantum dot solar cells: optimized gratings for ultrathin waveguide devcies

C. O. McPheeters, C. J. Hill, D. Z. Hu, S. H. Lim, D. Derkacs, D. Z. Ting, D. M. Schaadt, S. D. Gunapala, and Edward T. Yu

SPIE Solar Energy + Technology, San Diego, Vereinigte Staaten von AmerikaUSA美国

Cu-doped GaN

P. R. Ganz, G. Fischer, C. Sürgers, and D. M. Schaadt

International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN-2010), Beijing 接受, ChinaChina中国

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Investigation of pre-structured GaAs surface for subsequent site-selective InAs QD growth

M. Helfrich, R. Gröger, A. Förste, D. Litvinov, D. Gerthsen, T. Schimmel, and D. M. Schaadt

International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN-2010), Beijing 接受, ChinaChina中国

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Microstructure of M- and A-plane GaN on LiAlO₂ grown by plasma-assisted MBE

R. Schuber, C. H. Shih, Y. L. Chen, T. H. Huang, L. W. Chang, I. Lo, M. M. C. Chou, and D. M. Schaadt

International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN-2010), Beijing 接受, ChinaChina中国

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Influence of monolayer AlAs on solar cells with InAs quantum dots embedded in InGaAs/GaAs matrix

D. Z. Hu, C. O. McPheeters, E. T. Yu, and D. M. Schaadt

International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN-2010), Beijing 接受, ChinaChina中国

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Cu-doped AlN grown by molecular beam epitaxy

P. R. Ganz, G. Fischer, C. Sürgers, and D. M. Schaadt

30^th International Conference on the Physics of Semiconductors (ICPS 2010) 接受, Seoul, SüdkoreaSeoul, South Korea首爾, 大韩民国

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Epitaxial growth of AlN films on Si(111) and their optical properties

D. Z. Hu, R. Vöhringer, and D. M. Schaadt

30^th International Conference on the Physics of Semiconductors (ICPS 2010) 接受, Seoul, SüdkoreaSeoul, South Korea首爾, 大韩民国

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Thermal annealing of InAs quantum dots on patterned GaAs substrates

M. Helfrich, J. Hendrickson, D. Rülke, H. Kalt, M. Hetterich, G. Khitrova, H. Gibbs, and D. M. Schaadt

30^th International Conference on the Physics of Semiconductors (ICPS 2010) 接受, Seoul, SüdkoreaSeoul, South Korea首爾, 大韩民国

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Growth of M- and A-plane GaN on LiGaO₂ by plasma-assisted MBE

R. Schuber, M. M. C. Chou, P. Vincze, Th. Schimmel, and D. M. Schaadt

30^th International Conference on the Physics of Semiconductors (ICPS 2010) 接受, Seoul, SüdkoreaSeoul, South Korea首爾, 大韩民国

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Nanoscale particles for enhanced absorption in solar cells

D. M. Schaadt

Institut de Physique et Chimie des Matériaux de Strasbourg, Strasbourg, FrankreichFrance法国

Site-selective molecular beam epitaxial growth of InAs quantum dots on pre-patterned GaAs substrates

M. Helfrich, D. Z. Hu, J. Hendrickson, D. Rülke, P. Aßhoff, H. Kalt, M. Hetterich, G. Khitrova, H. M. Gibbs, and D. M. Schaadt

Quantum Dot 2010, Nottingham, Vereinigtes KönigreichUnited Kingdom英国

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Composition quantification of InGaAs quantum wells by transmission measurements in a scanning electron microscope

T. Volkenandt, E. Müller, D. Gerthsen, D. Z. Hu, and D. M. Schaadt

Frühjahrstagung der European Materials Research SocietySpring meeting of the European Materials Research Society欧洲材料研究学会春季会议, Strasbourg, FrankreichFrance法国

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Optical Microresonators Fabricated by Epitaxial DBR Overgrowth of Pyramidal GaAs Cavities

D. Rülke, M. Karl, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

HL 58.4, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Regensburg, DeutschlandGermany德国

Growth of M- and A-plane GaN on LiGaO₂ by plasma-assisted MBE

R. Schuber, M. M. C. Chou, and D. M. Schaadt

HL 56.6, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Regensburg, DeutschlandGermany德国

Site-selective molecular beam epitaxial growth of InAs quantum dots on pre-patterned GaAs substrates

M. Helfrich, D. Z. Hu, J. Hendrickson, D. Rülke, P. Aßhoff, H. Kalt, M. Hetterich, G. Khitrova, H. M. Gibbs, and D. M. Schaadt

HL 52.10, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Regensburg, DeutschlandGermany德国

Wachstum von Al_1-xIn_xN mittels Molekularstrahlepitaxie

R. Vöhringer, D. Z. Hu, and D. M. Schaadt

HL 34.20, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Regensburg, DeutschlandGermany德国

Electric Field and Excitation-Power Dependent Micro-Photoluminescence Spectroscopy of Single In(Ga)As Quantum Dots

F. Stockmar, D. Rülke, D. M. Schaadt, H. Kalt, and M. Hetterich

HL 31.40, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Regensburg, DeutschlandGermany德国

Cu-doped Nitrides: Spinaligner at room-temperature

P. R. Ganz, C. Sürgers, and D. M. Schaadt

HL 26.4, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Regensburg, DeutschlandGermany德国

Strongly Coupled Single-Quantum-Dot Nanocavity System: From Vacuum Rabi Splitting to Lasing

H. M. Gibbs, G. Khitrova, B. C. Richards, J. Hendrickson, J. Sweet, J. D. Olitzky, U. Khankhoje, A. Scherer, D. M. Schaadt, D. Z. Hu, M. Helfrich, D. Litvinov, D. Gerthsen, and M. Wegener

The 40^th Winter Colloquium on the PHYSICS of QUANTUM ELECTRONICS (PQE-2010), Snowbird, UT, Vereinigte Staaten von AmerikaUSA美国

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Radius Dependent Shift of Surface Plasmon Frequency in Metallic Nanospheres: Theory and Experiment

W. Jacak, J. Krasnyj, J. Jacak, R. Gonczarek, L. Jacak, D. Z. Hu, and D. M. Schaadt

Canada - Poland - Japan International Symposium on Nanoscience, Breslau, PolenWrocław, PolandWrocław, 波兰

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Enhanced optical absorption via excitation of surface plasmon resonances in metal nanoparticles placed on a semiconductor device

D. Z. Hu, C. McPheeters, E. T. Yu, and D. M. Schaadt

Summer School on Plasmonics, Porquerolles Island, FrankreichFrance法国

Towards a quantitative concentration analysis in InGaAs heterostructures using HAADF-STEM

T. Mehrtens, K. Müller, M. Schowalter, N. Neugebohrn, A. Rosenauer, D. Z. Hu, and D. M. Schaadt

Microscopy Conference 2009, Graz, ÖsterreichAustria奥地利

Quantification of the In concentration of InGaAs quantum wells by transmission measurements in a scanning electron microscope

T. Volkenandt, E. Müller, D. Gerthsen, D. Z. Hu, and D. M. Schaadt

Microscopy Conference 2009, Graz, ÖsterreichAustria奥地利

Cu-doped GaN grown by molecular beam epitaxy

P. R. Ganz, C. Sürgers, G. Fischer, and D. M. Schaadt

International Conference on Magnetism - ICM 2009, Karlsruhe, DeutschlandGermany德国

Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles

D. M. Schaadt

Technische Hochschule Breslau, Breslau, PolenWrocław University of Technology, Wrocław, Poland弗罗茨瓦夫理工大学， 弗罗茨瓦夫， 波兰 (eingeladen)(invited)(邀请报告)

Optical microcavities with pyramidal shape

D. Rülke, M. Karl, T. Beck, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

European Quantum Electronics Conference CLEO Europe - EQEC 2009, MünchenMunich慕尼黑, DeutschlandGermany德国

Reversed pyramids as novel optical micro-cavities

M. Karl, D. Rülke, T. Beck, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

9^th International Conference on Physics of Light-Matter Coupling in Nanostructures - PLMCN9, Leece, ItalienItaly意大利

Molecular beam epitaxy of III-V arsenides and nitrides

D. M. Schaadt

National Sun Yat-Sen University, Kaohsiung, TaiwanNational Sun Yat-Sen University, Kaohsiung, Taiwan国立中山大学, 高雄，台湾 (eingeladen)(invited)(邀请报告)

Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM

T. Mehrtens, M. Schowalter, K. Müller, A. Rosenauer, D. Z. Hu, and D. M. Schaadt

HL 1.6, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Systematic study of C- and M-plane growth of GaN on LiAlO₂ by plasma assisted MBE

R. Schuber, Y.-L. Chen, Y.-C. Hsu, and D. M. Schaadt

HL 9.27, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Fabrication and Characterization of Cu-Doped GaN

P. Ganz, C. Sürgers, and D. M. Schaadt

HL 9.38, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Critical thickness of ZnMnSe spin aligner layers on GaAs

B. Westenfelder, R. Dörlich, P. Asshoff, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

HL 9.62, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Barrier height measurements of In_xAl_1-xN

C. Barth, M. Trunk, and D. M. Schaadt

HL 48.91, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Selective molecular epitaxial growth of InAs quantum dots on pre-patterned GaAs substrates

M. Helfrich and D. M. Schaadt

HL 48.44, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Observation of single quantum dots in GaAs/AlAs micropillar cavities

P. Burger, M. Karl, D. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

HL 9.96, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Reversed GaAs pyramids as new optical micro-cavities based on total internal reflection

D. Rülke, M. Karl, D. Hu, D. M. Schaadt, B. Kettner, S. Burger, F. Schmidt, H. Kalt, and M. Hetterich

HL 51.7, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Dresden, DeutschlandGermany德国

Herstellung und Charakterisierung von III-V Verbindungshalbleitern

D. M. Schaadt

Technische Universität Bergakademie Freiberg, Freiberg, DeutschlandGermany德国 (eingeladen)(invited)(邀请报告)

Plasmonic nanoparticle scattering for enhanced performance of photovoltaic and photodetector devices

E. T. Yu, D. Derkacs, S. H. Lim, P. Matheu, and D. M. Schaadt

SPIE Photonics West 2008, San Jose, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

Nano-structured metallic electrodes for plasmonic optimized light-emitting diodes

U. Geyer, J. Hetterich, C. Diez, D. Z. Hu, D. M. Schaadt, and U. Lemmer

SPIE Photonics West 2008, San Jose, Vereinigte Staaten von AmerikaUSA美国

Electrical spin injection into InGaAs quantum dots: Single dot devices and time-resolved studies of the electroluminescence polarization dynamics

M. Hetterich, W. Löffler, P. Aßhoff, H. Flügge, J. Müller, B. Westenfelder, D. Z. Hu, D. M. Schaadt, and H. Kalt

9^th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 9), Klink / Müritz, DeutschlandGermany德国

Electrical spin injection into InGaAs quantum dots: Single dot devices and time-resolved studies of the electroluminescence polarization dynamics

P. Aßhoff, W. Löffler, H. Flügge, J. Müller, B. Westenfelder, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

International Conference on Semiconductor Physics - ICPS, Rio de Janeiro, BrasilienBrasil巴西

GaAs micro-pyramids serving as optical micro-cavities

M. Karl, T. Beck, S. Li, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

International Conference on Semiconductor Physics - ICPS, Rio de Janeiro, BrasilienBrasil巴西

Optical cavity modes in micro-pyramids

M. Karl, T. Beck, F. M. Weber, J. Lupaca-Schomber, S. Li, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

Conference on Lasers and Electro-Optics (CLEO) / Quantum Electronics and Laser Science (QELS) Conference 2008, San Jose, California, Vereinigte Staaten von AmerikaUSA美国

Influence of sulfur on the polarization degree in spin-injection light-emitting diodes with lattice-matched ZnMnSSe spin aligners

J. Müller, W. Löffler, B. Westenfelder, H. Kalt, D. Z. Hu, D. M. Schaadt, and M. Hetterich

HL 17.14, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Berlin, DeutschlandGermany德国

GaAs micropyramids as optical resonators

T. Beck, M. Karl, F.M. Weber, J. Lupaca-Schomber, S. Li, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich

HL 24.10, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Berlin, DeutschlandGermany德国

Increasing efficiency of photovoltaics via surface plasmon polariton scattering effects in metal nanoparticles

E. T. Yu, D. Derkacs, S. H. Lim, W. Mar, P. Matheu, and D. M. Schaadt

Nanotech 2007 Conference, Santa Clara, CA, Vereinigte Staaten von Amerika (2007) (eingeladen)(invited)(邀请报告)

Wachstum von GaN Quantenpunkten auf 6H-AlN

D. M. Schaadt, O. Brandt, U. Jahn, H.-P. Schönherr, und K. H. Ploog

Deutscher MBE-Workshop 2006, Hamburg, DeutschlandGermany德国

Micromagnetic properties of epitaxial MnAs films on GaAs surfaces

T. Hesjedal, R. Engel-Herbert, D. M. Schaadt, and K. H. Ploog

International Symposium on Compound Semiconductors 2006, Vancouver, KanadaCanada加拿大

Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted MBE

D. M. Schaadt, O. Brandt, A. Trampert, H.-P. Schönherr, and K. H. Ploog

First International Symposium on Growth of III-Nitrides, Linköping, SchwedenSweden瑞典

Stress Evolution During Ripening of Self-assembled InAs/GaAs Quantum Dots

D. M. Schaadt, D. Z. Hu, and K. H. Ploog

33^st Conference on the Physics and Chemistry of Semiconductor Interfaces, Cocoa Beach, FL, Vereinigte Staaten von AmerikaUSA美国

Nanoscale electronic structure of defects in nitride semiconductors imaged by scanned probe microscopy

E. T. Yu, B. S. Simpkins, X. Zhou, H. Zhang, E. J. Miller, and D. M. Schaadt

11^th International Conference on Defects – Recognition, Imaging, and Physics in Semiconductors (DRIP XI), Beijing, ChinaChina中国 (eingeladen)(invited)(邀请报告)

Numerical simulation of the micromagnetic structure of MnAs films

D. M. Schaadt

Micromagnetics: Analysis and Computation, Berlin, DeutschlandGermany德国 (eingeladen)(invited)(邀请报告)

Stress evolution during growth of stacked self-assembled InAs/GaAs quantum dots

D. M. Schaadt, S. Krauß, R. Koch, G. Mussler, L. Schreiber, and K. H. Ploog

13^th Euro-MBE Workshop, Grindelwald, SchweizSwitzerland瑞士

Nanoscale current transport in epitaxial SrTiO₃ on n+ Si imaged with conductive atomic force microscopy

D. M. Schaadt, E. T. Yu, V. Vaithyanathan, and D. G. Schlom

31^st Conference on the Physics and Chemistry of Semiconductor Interfaces, Kailuna-Kona, HI, Vereinigte Staaten von AmerikaUSA美国

Nanoscale characterization and mitigation of defects in nitride semiconductors

E. T. Yu, E. J. Miller, D. M. Schaadt, and B. S. Simpkins

2003 International Symposium on Compound Semiconductors, San Diego, CA, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

From microscopic characterization to processes for defect mitigation in nitride semiconductors

E. T. Yu, E. J. Miller, D. M. Schaadt, and B. S. Simpkins

Tri-Services Workshop on Process Induced Defects in Wide Bandgap Semiconductors, Grants Pass, OR, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

Influence of dislocations on charge distributions and carrier transport in nitride semiconductors

E. T. Yu, B. S. Simpkins, E. J. Miller, and D. M. Schaadt

ONR Workshop on Extended Defects in Wide Gap Semiconductors II, Irvington, VA, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

Electronic properties of defects in GaN characterized by scanning probe microscopy

E. T. Yu, E. J. Miller, D. M. Schaadt, and B. S. Simpkins

ONR Workshop on Characterization of Defects in Wide Bandgap Semiconductors, Hawaii, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

Design and fabrication of device structures to test effects of ferromagnetic proximity in semiconductors

D. M. Schaadt, M. Li, and E. T. Yu

2^nd CLC Meeting, Austin, TX, Vereinigte Staaten von AmerikaUSA美国

Surfactant-Assisted Growth of CoPt₃: Perpendicular Magnetic Anisotropy at Low Deposition Temperatures

B. B. Maranville, F. Hellman, D. M. Schaadt, E. T. Yu

2003 March Meeting of the American Physical SocietyMarch Meeting of the American Physical Society美国物理学会三月会议, Austin, TX, Vereinigte Staaten von AmerikaUSA美国

Reverse-bias leakage current reduction in GaN Schottky diodes by surface modification with an atomic force microscope

E. J. Miller, D. M. Schaadt, C. W. McKinney, E. T. Yu, C. Poblenz, P. Waltereit, and J. S. Speck

44^th Electronic Materials Conference, Santa Barbara, CA, Vereinigte Staaten von AmerikaUSA美国

Scanning probe characterization of nanoscale charge transport

E. T. Yu, E. J. Miller, and D. M. Schaadt

Workshop on Induced Collective Phenomena in Semiconductors, Indianapolis, IN, Vereinigte Staaten von AmerikaUSA美国

Electrical properties of extended defects in nitride semiconductors characterized by scanning probe microscopy

E. T. Yu, E. J. Miller, D. M. Schaadt, C. Poblenz, C. Elsass, and J. S. Speck

ONR Workshop on Extended Defects in Wide Gap Semiconductors: Electrical and Optical Effects, BelizeBelize伯利兹 (eingeladen)(invited)(邀请报告)

Scanning Capacitance Spectroscopy of an Al_xGa_1-xN/GaN Heterostructure Field-Effect Transitor Structure: Analysis of Probe Tip Effects

D. M. Schaadt and E. T. Yu

29^th Conference on the Physics and Chemistry of Semiconductor Interfaces, Santa Fe, NM, Vereinigte Staaten von AmerikaUSA美国

Characterization and local passivation of reverse-bias leakage paths in an AlGaN/GaN heterostructure

E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. R. Elsass, P. Waltereit, and J. S. Speck

Materials Research Society Fall Meeting, Boston, MA, Vereinigte Staaten von AmerikaUSA美国

Nanoscale characterization of nitride heterostructures by scanning capacitance microscopy

E. T. Yu, D. M. Schaadt, and K. V. Smith

ONR Workshop on Near-Surface Effects in Semiconductor Substrates, Kodiak, AK, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

Scanning capacitance characterization of AlGaN/GaN heterostructures

E. T. Yu, D. M. Schaadt, K. V. Smith, and E. J. Miller

2001 GaN Electronics Workshop, Santa Barbara, CA, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

Frequency response of trap states in an Al_xGa_1-xN/GaN heterostructure field-effect transistor measured at the nanoscale by dC/dV spectroscopy

D. M. Schaadt, E. T. Yu, and J. M. Redwing

Materials Research Society Spring Meeting, San Francisco, CA, Vereinigte Staaten von AmerikaUSA美国

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Scanning capacitance spectroscopy and quantitative analysis of lateral threshold voltage variations in an Al_xGa_1-xN/GaN heterostructure field-effect transistor

D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing

28^th Conference on the Physics and Chemistry of Semiconductor Interfaces, Lake Buena Vista, FL, Vereinigte Staaten von AmerikaUSA美国

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Characterization of nanoscale electronic properties in nitride semiconductors

E. T. Yu, K. V. Smith, X. Z. Dang, E. J. Miller, and D. M. Schaadt

27^th International Symposium on Compound Semiconductors, Monterey, CA, Vereinigte Staaten von AmerikaUSA美国

Hybrid magnetoelectronic device for magnetic field sensing

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

2000 Symposium on Spin Electronics, Halle, DeutschlandGermany德国

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Perpendicular magnetic anisotropy of CoPt₃ on vicinal substrates

B. B. Maranville, A. Shapiro, F. Hellman, D. M. Schaadt, and E. T. Yu

2000 March Meeting of the American Physical SocietyMarch Meeting of the American Physical Society美国物理学会三月会议, Minneapolis, MN, Vereinigte Staaten von AmerikaUSA美国

A monolithic field-effect-transistor-amplified magnetic field sensor

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

SOE Research Review, UCSD, San Diego, CA, Vereinigte Staaten von AmerikaUSA美国

A monolithic field-effect-transistor-amplified magnetic field sensor

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

CMRR Research Review, UCSD, San Diego, CA, Vereinigte Staaten von AmerikaUSA美国

Novel hybrid magnetoelectronic device for magnetic field sensing

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

American Vacuum Society 46^th International Symposium, Seattle, WA, Vereinigte Staaten von AmerikaUSA美国

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Nanoscale charge transport properties of Co/SiO₂ multilayer structures and their application in a novel magnetic field sensor

D. M. Schaadt

IBM Almaden Research Center, San Jose, CA, Vereinigte Staaten von AmerikaUSA美国 (eingeladen)(invited)(邀请报告)

Nanoscale charge transport properties of Co/SiO₂ multilayer structures and their application in a novel magnetic field sensor

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

41^st Electronic Materials Conference, Santa Barbara, CA, Vereinigte Staaten von AmerikaUSA美国

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Charging and discharging of Co/SiO₂ multilayer structures investigated by scanning force microscopy

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

Materials Research Society Spring Meeting, San Francisco, CA, Vereinigte Staaten von AmerikaUSA美国

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Charge storage and transport in Co nanoclusters embedded in SiO₂ investigated by scanning force microscopy

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

SOE Research Review, UCSD, San Diego, CA, Vereinigte Staaten von AmerikaUSA美国

Charge storage in Co nanoclusters embedded in SiO₂ investigated by scanning force microscopy

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

CMRR Research Review, UCSD, San Diego, CA, Vereinigte Staaten von AmerikaUSA美国

Magnetic domain structure of Co nanoclusters in SiO₂ thin film matrix studied by magnetic force microscopy

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

SOE Research Review, UCSD, San Diego, CA, Vereinigte Staaten von AmerikaUSA美国

Einfluss von Sauerstoffleerstellen und Dotierungen in nanokristallinem Ceroxid auf katalytische Aktivität bei Redoxreaktionen

D. Schaadt, A. Tschöpe, and R. Birringer

O 21.10, Frühjahrstagung der Deutschen Physikalischen GesellschaftSpring meeting of the German Physical Society德国物理学会春季会议, Münster, DeutschlandGermany德国